The Photo-Electrical Behavior of n-Si and p-Si/Orange Dye/Conductive Glass Cells

M.H. Sayyad1, Kh.S. Karimov2, A. Ellahi1, S.A. Moiz1, Z.M. Karieva3, M.A. Turaeva2 and Kh. Zakaullah1

1GIK Institute of Engineering Sciences and Technology, Topi, 23460, N.W.F.P., Pakistan

2Physical Technical Institute of Academy of Sciences, Dushanbe, 734025, Tajikistan

3Tajik Technical University, Dushanbe, 734000, Tajikistan


The photo-electrical behavior of n-Si/orange dye/conductive glass and p-Si/orange dye/conductive glass sandwich type cells were investigated. In these cells crystal silicon of n-type and p-type and conductive glass (CG) electrodes were employed and the aqueous solution of organic dye (OD) was used as an electrolyte in the distilled water. Under filament lamp illumination, photo-induced open-circuit voltage and short-circuit current exponentially dropped with time for the n-Si/orange dye/CG cell. In the p-Si/orange dye/CG cell, the photovoltaic effect was not observed. The n-Si/OD/CG cell showed high photo-electrical response under illumination. In the light-voltage/current conversion, these cells behaved as a differentiator and exhibited charge-storage properties.