Electrical Properties of Organic Semiconductor Orange Nitrogen Dye Thin Films Deposited from Solution at High Gravity

Kh.S.Karimov1, M.M.Ahmed2, S.A.Moiz2, P.Babadzhanov1, R.Marupov1, M.A.Turaeva1

1Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33, Dushanbe, 734025, Tajikistan

2GIK Institute of Engineering Sciences and Technology, Topi, Swabi, N.W.F.P., Pakistan, 23460

Abstract

In this study the electrical properties of organic semiconductor orange nitrogen dye (OND) have been examined. Thin film samples were deposited from OND solution in water on a nickel substrate (it was the first electrode) at room temperature at different gravity conditions including, 1g (reference samples), 123 g, 277 g and 1107 g by a centrifugal machine. As a second electrode of the samples a gallium drop was used.

The voltage-current characteristics of the samples were measured at temperature interval of 30° C 60° C. It was found that all voltage-current characteristics were asymmetrical with slightly rectification behavior. The resistances of the samples decrease monotonously with temperature but with acceleration they show minimum around of 123g. As a rule the forward bias resistance ("+" voltage was applied to gallium) were less than reverse bias ones ("+" voltage was applied to nickel).

The electric behavior of the samples analyzed by the conception of space-charge limited currents (SCLC) at the presence of two different kinds of metallic electrodes (Ni and Ga) in the samples.