Electrodeposition of CdxHg1-xTe Semiconductor Compound

on the Glasscarbon Electrode

M.B.Dergacheva, V.N.Statsyuk, L.A.Fogel

Institute of organic catalysis and electrochemistry MES RK

142 Kunaev str., 480100 Almaty, Kazakhstan

Abstract

The method of CV-curves for investigation of the CdxHg1-xTe thin films electrodeposition –electrooxidation on the glasscarbon electrode was used. The anodic maximum of CdxHg1-xTe oxidation in the sulfuric acid supporting electrolyte was found. The current and potential of this maximum depended on the electrodeposition conditions and electrolyte composition. The CdxHg1-xTe compound riched with mercury has most positive potential of oxidation, which equals to 0,875 V (Ag/AgCl) in investigated electrolyte. This maximum can be used for identification of the compound formation.